In the past four decades, there has been growing interest in the exciting new topic of physics in low dimensions. Thousands of original ideas have been proposed in the literature, and some are confirmed experimentally, along with several Nobel prizes which have been awarded in this field. While there are several books available, almost all are technical and accessible only to expert researchers. This book provides an accessible introduction to the field, with less emphasis on technical details. Whilst this book does not provide a traditional history of nano-science, instead it uses simple explanations and case studies as vehicles to explain key discoveries and the importance of them, enabling readers without a background in the area to gain an understanding of some aspects of nanoscale physics. It will be of interest to researchers working in condensed matter physics, in addition to engineers and advanced students in those disciplines. It also remains accessible to ‘physics enthusiasts’ from other academic disciplines, as technical details are contained within boxes and footnotes which can be skipped for a general reading of the book. Features: - Provides an accessible introduction to a technical subject - Contains exciting developments from the cutting-edge science being conducted in the area - Authored by a recognised expert in the field

In the past four decades, there has been growing interest in the exciting new topic of physics in low dimensions. Thousands of original ideas have been proposed in the literature, and some are confirmed experimentally, along with several Nobel prizes which have been awarded in this field. While there are several books available, almost all are technical and accessible only to expert researchers. This book provides an accessible introduction to the field, with less emphasis on technical details. Whilst this book does not provide a traditional history of nano-science, instead it uses simple explanations and case studies as vehicles to explain key discoveries and the importance of them, enabling readers without a background in the area to gain an understanding of some aspects of nanoscale physics. It will be of interest to researchers working in condensed matter physics, in addition to engineers and advanced students in those disciplines. It also remains accessible to 'physics enthusiasts' from other academic disciplines, as technical details are contained within boxes and footnotes which can be skipped for a general reading of the book. Features: - Provides an accessible introduction to a technical subject - Contains exciting developments from the cutting-edge science being conducted in the area - Authored by a recognised expert in the field

Charge migration through DNA has been the focus of considerable interest in recent years. This book presents contributions from an international team of researchers active in this field. It contains a wide range of topics that includes the mathematical background of the quantum processes involved, the role of charge transfer in DNA radiation damage, a new approach to DNA sequencing, DNA photonics, and many others.

Charge migration through DNA has been the focus of considerable interest in recent years. This book presents contributions from an international team of researchers active in this field. It contains a wide range of topics that includes the mathematical background of the quantum processes involved, the role of charge transfer in DNA radiation damage, a new approach to DNA sequencing, DNA photonics, and many others.

The experimental discovery of the fractional quantum Hall effect (FQHE) at the end of 1981 by Tsui, Stormer and Gossard was absolutely unexpected since, at this time, no theoretical work existed that could predict new struc tures in the magnetotransport coefficients under conditions representing the extreme quantum limit. It is more than thirty years since investigations of bulk semiconductors in very strong magnetic fields were begun. Under these conditions, only the lowest Landau level is occupied and the theory predicted a monotonic variation of the resistivity with increasing magnetic field, depending sensitively on the scattering mechanism. However, the ex perimental data could not be analyzed accurately since magnetic freeze-out effects and the transitions from a degenerate to a nondegenerate system complicated the interpretation of the data. For a two-dimensional electron the positive background charge is well separated from the two gas, where dimensional system, magnetic freeze-out effects are barely visible and an analysis of the data in the extreme quantum limit seems to be easier. First measurements in this magnetic field region on silicon field-effect transistors were not successful because the disorder in these devices was so large that all electrons in the lowest Landau level were localized. Consequently, models of a spin glass and finally of a Wigner solid were developed and much effort was put into developing the technology for improving the quality of semi conductor materials and devices, especially in the field of two-dimensional electron systems."

The experimental discovery of the fractional quantum Hall effect (FQHE) at the end of 1981 by Tsui, Stormer and Gossard was absolutely unexpected since, at this time, no theoretical work existed that could predict new struc tures in the magnetotransport coefficients under conditions representing the extreme quantum limit. It is more than thirty years since investigations of bulk semiconductors in very strong magnetic fields were begun. Under these conditions, only the lowest Landau level is occupied and the theory predicted a monotonic variation of the resistivity with increasing magnetic field, depending sensitively on the scattering mechanism. However, the ex perimental data could not be analyzed accurately since magnetic freeze-out effects and the transitions from a degenerate to a nondegenerate system complicated the interpretation of the data. For a two-dimensional electron gas, where the positive background charge is well separated from the two dimensional system, magnetic freeze-out effects are barely visible and an analysis of the data in the extreme quantum limit seems to be easier. First measurements in this magnetic field region on silicon field-effect transistors were not successful because the disorder in these devices was so large that all electrons in the lowest Landau level were localized. Consequently, models of a spin glass and finally of a Wigner solid were developed and much effort was put into developing the technology for improving the quality of semi conductor materials and devices, especially in the field of two-dimensional electron systems."